Article: Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon devices with a separated double-gate saddle-type structure.
Journal of nanoscience and nanotechnology
2011 Volume 11, Issue 2, Page(s) 1337–1341
Abstract: Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon flash memory devices based on a separated double-gate (SDG) saddle structure with a recess channel region had two different doping regions in silicon-fin channel to operate two-bit per cell. ...
Abstract | Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon flash memory devices based on a separated double-gate (SDG) saddle structure with a recess channel region had two different doping regions in silicon-fin channel to operate two-bit per cell. A simulation results showed that the short channel effect, the cross-talk problem between cells, and the increase in threshold voltage distribution were minimized, resulting in the enhancement of the scaling-down characteristics and the program/erase speed. |
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Language | English |
Publishing date | 2011-02-12 |
Publishing country | United States |
Document type | Journal Article |
ISSN | 1533-4880 |
ISSN | 1533-4880 |
DOI | 10.1166/jnn.2011.3373 |
Database | MEDical Literature Analysis and Retrieval System OnLINE |
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