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  1. Article: Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots.

    Abramkin, Demid S / Petrushkov, Mikhail O / Bogomolov, Dmitrii B / Emelyanov, Eugeny A / Yesin, Mikhail Yu / Vasev, Andrey V / Bloshkin, Alexey A / Koptev, Eugeny S / Putyato, Mikhail A / Atuchin, Victor V / Preobrazhenskii, Valery V

    Nanomaterials (Basel, Switzerland)

    2023  Volume 13, Issue 5

    Abstract: In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs' formation by molecular beam epitaxy on both matched ... ...

    Abstract In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs' formation by molecular beam epitaxy on both matched GaP and artificial GaP/Si substrates were determined. An almost complete plastic relaxation of the elastic strain in SAQDs was reached. The strain relaxation in the SAQDs on the GaP/Si substrates does not lead to a reduction in the SAQDs luminescence efficiency, while the introduction of dislocations into SAQDs on the GaP substrates induced a strong quenching of SAQDs luminescence. Probably, this difference is caused by the introduction of Lomer 90°-dislocations without uncompensated atomic bonds in GaP/Si-based SAQDs, while threading 60°-dislocations are introduced into GaP-based SAQDs. It was shown that GaP/Si-based SAQDs have an energy spectrum of type II with an indirect bandgap and the ground electronic state belonging to the X-valley of the AlP conduction band. The hole localization energy in these SAQDs was estimated equal to 1.65-1.70 eV. This fact allows us to predict the charge storage time in the SAQDs to be as long as >>10 years, and it makes GaSb/AlP SAQDs promising objects for creating universal memory cells.
    Language English
    Publishing date 2023-02-28
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano13050910
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article: Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration.

    Petrushkov, Mikhail O / Abramkin, Demid S / Emelyanov, Eugeny A / Putyato, Mikhail A / Komkov, Oleg S / Firsov, Dmitrii D / Vasev, Andrey V / Yesin, Mikhail Yu / Bakarov, Askhat K / Loshkarev, Ivan D / Gutakovskii, Anton K / Atuchin, Victor V / Preobrazhenskii, Valery V

    Nanomaterials (Basel, Switzerland)

    2022  Volume 12, Issue 24

    Abstract: The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural ... ...

    Abstract The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It was found that the introduction of LT-GaAs layers, in combination with post-growth cyclic annealing, reduced the threading dislocation density down to 5 × 10
    Language English
    Publishing date 2022-12-14
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano12244449
    Database MEDical Literature Analysis and Retrieval System OnLINE

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