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Article: Soft X-ray spectroscopic studies of the electronic structure of M:BiVO4 (M = Mo, W) single crystals

Jovic, V / Bluhm, H / Jovic, B / Lamoureux, B / Laverock, J / Mullins, C. B / Rettie, A. J. E / Singh, V. R / Smith, K. E / Söhnel, T / Su, T.-Y / Wilson, D / Zhou, J.-S

Journal of materials chemistry A. 2015 Nov. 24, v. 3, no. 47

2015  

Abstract: Bismuth vanadate, BiVO4, is a promising material for use as an anode in photoelectrochemical water splitting. However, its conversion efficiency is limited by poor bulk charge transport, which is via small-polarons. We report here the use of a suite of X- ...

Abstract Bismuth vanadate, BiVO4, is a promising material for use as an anode in photoelectrochemical water splitting. However, its conversion efficiency is limited by poor bulk charge transport, which is via small-polarons. We report here the use of a suite of X-ray spectroscopic probes to determine the electronic structure of 0.3–0.6 at% M:BiVO4 (M = Mo or W). The results are interpreted in the context of current theories regarding the influence of doping on the existence of inter-band gap small-polaron states and their effect on the conversion efficiency of BiVO4. Preliminary X-ray absorption and emission measurements reveal that doping widens the band gap from 2.50 to 2.75 eV, whereas the indirect nature of the band gap remains unaffected. X-ray absorption spectroscopy verified that the doping levels did not affect the distorted tetrahedral environment of V5+ in BiVO4. For BiVO4 and W:BiVO4, V L3 resonant inelastic X-ray scattering showed energy loss features related to charge transfer from low lying valence metal/oxygen states to unoccupied V eg conduction band states. A 3.8 eV energy loss feature, coupled with small polaron-like peaks measured in valence band resonant photoelectron spectroscopy of M:BiVO4, point to the population of inter-band gap V 3d states of eg symmetry. The data reveals the existence of a band gap state in the absence of an applied bias in M:BiVO4, linked to small-polaron formation. We tentatively assign it as a deep trap state, which suggests that the improved conversion efficiency of M:BiVO4 relative to the undoped material is largely due to the increased carrier concentration in spite of increased carrier recombination rates.
Keywords absorption ; anodes ; bismuth ; crystals ; electrochemistry ; energy ; molybdenum ; oxygen ; photochemistry ; spectral analysis ; X-radiation ; X-ray absorption spectroscopy ; X-ray scattering
Language English
Dates of publication 2015-1124
Size p. 23743-23753.
Publishing place The Royal Society of Chemistry
Document type Article
ZDB-ID 2702232-8
ISSN 2050-7496 ; 2050-7488
ISSN (online) 2050-7496
ISSN 2050-7488
DOI 10.1039/c5ta07898a
Database NAL-Catalogue (AGRICOLA)

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