LIVIVO - The Search Portal for Life Sciences

zur deutschen Oberfläche wechseln
Advanced search

Search results

Result 1 - 10 of total 16

Search options

  1. Article ; Online: Impurity Influence on Nitride LEDs

    O.I. Rabinovich / S.A. Legotin / S.I. Didenko

    Journal of Nano- and Electronic Physics, Vol 6, Iss 3, Pp 03002-1-03002-

    2014  Volume 2

    Abstract: Light emitting diodes (LEDs) are widely used nowadays. They are used in major parts of our life. But it is still necessary to improve their characteristics. In this paper the impurity and Indium atoms influence on the LEDs characteristics is investigated ...

    Abstract Light emitting diodes (LEDs) are widely used nowadays. They are used in major parts of our life. But it is still necessary to improve their characteristics. In this paper the impurity and Indium atoms influence on the LEDs characteristics is investigated by computer simulation. Simulation was carried out in Sim Windows. The program was improved for this purpose by creating new files for AlGaInN heterostructure and devices including more than 25 basic parameters. It was found that characteristics depend on impurity and indium atoms changes a lot. The optimum impurity concentration for doping barriers between quantum wells was achieved. By varying impurity and Indium concentration the distribution in AlGaInN heterostructure LEDs characteristics could be improved.
    Keywords Light emitting diode ; AlGaInN ; Simulation ; Quantum efficienc ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Language English
    Publishing date 2014-07-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    More links

    Kategorien

  2. Article ; Online: Heterocyclic Polymers Perspectives in Nanolayers of Donor Acceptor Heterojunction for Organic Photovoltaic Application

    M.N. Orlova / S.I. Didenko / O.I. Rabinovich / D.S. Saranin

    Journal of Nano- and Electronic Physics, Vol 7, Iss 4, Pp 04085-1-04085-

    2015  Volume 4

    Abstract: The possibility of molecular structural design provides a wide field for engineers to generate interest to heterocyclic structures based on die-perylene and naphthoyl, the possible combinations for the superposition of the absorption spectra. From this ... ...

    Abstract The possibility of molecular structural design provides a wide field for engineers to generate interest to heterocyclic structures based on die-perylene and naphthoyl, the possible combinations for the superposition of the absorption spectra. From this point of view, the creation of optically active polymers based on polybenzomidazofenantroline (PBF), 1, 4, 5, 8- naphthalene tetracarboxylic and 3, 4, 9, 10- perylenetetracarboxylic acids opens new opportunities in this important field of science and technology. The results are high absorption in visible spectrum and ability of morphology improvement. Advantages in the optical properties PPBI-O and PNBI-O above the target prototype P3HT, namely a peak absorption in the region of 555 nm to 700 nm red edge are detected.
    Keywords Organic solar cells ; Polymers ; Degradation ; Scanning electron microscop ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Subject code 540
    Language English
    Publishing date 2015-12-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    More links

    Kategorien

  3. Article ; Online: Formation of Polymer Films in Organic Photovoltaic Systems

    M.N. Orlova / L.I. Kolesnikova / I.V. Schemerov / S.I. Didenko

    Journal of Nano- and Electronic Physics, Vol 6, Iss 3, Pp 03009-1-03009-

    2014  Volume 4

    Abstract: Research has indicated that the layer morphology of the films obtained (up to 350 nm thick) gives reason to postulate film structure and composition being dependent on the value of relative fluorescence variation under the influence of a superimposed ... ...

    Abstract Research has indicated that the layer morphology of the films obtained (up to 350 nm thick) gives reason to postulate film structure and composition being dependent on the value of relative fluorescence variation under the influence of a superimposed magnetic field. Moreover, the transmittance and absorption spectra of polymer films which in many ways define the architecture of a photovoltaic cell are highly dependent on the concentration of solutions in the 300-325 nm wavelength range.
    Keywords Photovoltaic cell ; Organic semiconductors ; Polymer ; Magnetic effec ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Language English
    Publishing date 2014-07-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    More links

    Kategorien

  4. Article ; Online: CH3NH3PBI3 IV Output Parameters Degradation Investigation

    M.N. Orlova / S.I. Didenko / D.S. Saranin / O.I. Rabinovich / A.Y. Krukov / A.V. Kolesnikov

    Journal of Nano- and Electronic Physics, Vol 8, Iss 4, Pp 04004-1-04004-

    2016  Volume 4

    Abstract: Organic photovoltaics, based on hybrid inorganic organic optoelectronic perovskites, with structure alkali- metal- halide are the newest emerging technology in the third generation development. Despite tremendous efficiency records, more than 21 %, ... ...

    Abstract Organic photovoltaics, based on hybrid inorganic organic optoelectronic perovskites, with structure alkali- metal- halide are the newest emerging technology in the third generation development. Despite tremendous efficiency records, more than 21 %, optoelectronic perovskites’ instability prevents their commercialization and mass production. Issues with degradation are caused by various types of environmental influences. The main issues with stability and power loss in devices are linked to moisture, oxygen, temperature, and light-induced structure defects. Initial measurements are taken after long term debugging with minimal aggressive exposure to environmental conditions. In this case, preliminary degradation studies begin from measurements of light-induced effects. In this work, we will present the main trends in degradation of external characteristics during common I-V measurements, in the order of parameters which were effected the least by environmental factors. This investigation was made on fixed CH3NH3PBI3 solar cells with standard 1.5 AM testing and initial efficiencies more than 8 %.
    Keywords Organic photovoltaics ; Perovskite ; Power conversation efficiency ; Solar cell ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Language English
    Publishing date 2016-11-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    More links

    Kategorien

  5. Article ; Online: Silicon Photodetectors Matrix Coordinate Bipolar Functionally Integrated Structures

    V.N. Murashev / S.A. Legotin / D.S. El’nikov / S.I. Didenko / O.I. Rabinovich

    Journal of Nano- and Electronic Physics, Vol 7, Iss 1, Pp 01009-1-01009-

    2015  Volume 3

    Abstract: In this paper a new approach for solving the detection and coordinate the detection of radiation in the optical range of 0.3-1.1 microns, based on the use of so-called bipolar functionally integrated structures (BI-FIS) in pixels photodetector arrays is ... ...

    Abstract In this paper a new approach for solving the detection and coordinate the detection of radiation in the optical range of 0.3-1.1 microns, based on the use of so-called bipolar functionally integrated structures (BI-FIS) in pixels photodetector arrays is discussed. Variants of new technical solutions based on photo-detectors matrix pixel BI-FIS structures are shown. Their effectiveness and scope are evaluated.
    Keywords Detector ; The detector coordinate functionally integrated structure ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Language English
    Publishing date 2015-03-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    More links

    Kategorien

  6. Article ; Online: Heterostructure Active Area Optimization by Simulation

    O.I. Rabinovich / S.I. Didenko / S.A. Legotin / I.V. Fedorchenko / U.V. Osipov

    Journal of Nano- and Electronic Physics, Vol 7, Iss 4, Pp 04035-1-04035-

    2015  Volume 3

    Abstract: Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically ... ...

    Abstract Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained. It was determined that the best structure for AlGaInN NH is p+GaN / p+Al0.2Ga0.8N / 4(n-InxGa1 – xN-n-GaN) / n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum radiation and two ones at the both ends of active region are “barriers” which help to concentrate electrons / holes in active region and additionally “protect” QW from different defects.
    Keywords Light-emitting diode ; InGaN ; Simulatio ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Language English
    Publishing date 2015-12-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    More links

    Kategorien

  7. Article ; Online: Film Growth Based on an Organic Basis for Photovoltaic p-Cells

    M.N. Orlova / S.I. Didenko / O.I. Rabinovich / V.A. Kolesnikov / A.V. Desyatov / D.S. Saranin

    Journal of Nano- and Electronic Physics, Vol 7, Iss 1, Pp 01013-1-01013-

    2015  Volume 4

    Abstract: The main issue is to determine the allowable concentration of the polymer and the acceptor, allowing to obtain a film having a desired density and at the same time, the thickness, the optimum from the point of view of the diffusion length and the ... ...

    Abstract The main issue is to determine the allowable concentration of the polymer and the acceptor, allowing to obtain a film having a desired density and at the same time, the thickness, the optimum from the point of view of the diffusion length and the probability of dissociation of the intermediate particles with the formation of free charge carriers. From a comparison of the synthesized samples micrographs it can be concluded that the polymer concentration of 12.5 g/l gives a sufficiently dense and relatively uniform film without substantial amounts of undissolved polymer.
    Keywords Solar cells ; Polymer photovoltaic cell ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Language English
    Publishing date 2015-03-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    More links

    Kategorien

  8. Article ; Online: AlGaN Heterostructure Optimization for Photodetectors

    S.I. Didenko / О.I. Rabinovich / S.A. Legotin / I.V. Fedorchenko / А.А. Krasnov / Yu.V. Osipov / M.S. Melnik / K.A. Sergeev

    Journal of Nano- and Electronic Physics, Vol 8, Iss 3, Pp 03036-1-03036-

    2016  Volume 4

    Abstract: GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV-visible wavelength range. Most of experimental and theoretical work in this area has been focused so far on Schottky diode and p-i-n structures for ... ...

    Abstract GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV-visible wavelength range. Most of experimental and theoretical work in this area has been focused so far on Schottky diode and p-i-n structures for solar blind applications. However, it seems that bipolar phototransistors with their additional functionality could also be of potential interest. In this work we present the results of phototransistors parameters simulation using the software – Sim Windows. The structure analyzed consisted, counting from the substrate, of n-AlxGa1 – xN collector, p-GaN base and n-AlxGa1 – xN emitter. The Al mole fraction in the collector and emitter was varied from x  0.2 to x  0.3. The collector and emitter thickness was taken as 0.9 m. The doping level in the emitter and collector was varied from 1017 to 1019 cm – 3. The p-GaN base thickness was taken as 0.3 m, with doping of 1017-1018 cm – 3. The electron and hole lifetimes in the base were taken as 12 ns.
    Keywords Photodetector ; Simulation ; Nanoheterostructure ; Nitrid ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Subject code 290
    Language English
    Publishing date 2016-10-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    More links

    Kategorien

  9. Article ; Online: The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply

    S.U. Urchuk / A.A. Krasnov / S.A. Legotin / S.I. Didenko / V.N. Murashev / U.C. Omel’chenko / U.V. Osipov / O.I. Rabinovich / A.V. Popkova

    Journal of Nano- and Electronic Physics, Vol 7, Iss 4, Pp 04005-1-04005-

    2015  Volume 4

    Abstract: In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short- ... ...

    Abstract In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal to 1014 cm – 3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too.
    Keywords Betavoltaic effect ; Beta power source ; Betavoltaic battery ; p-i-n diode ; I-V characteristic simulatio ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Language English
    Publishing date 2015-12-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    More links

    Kategorien

  10. Article ; Online: Investigation of the Irradiation Influence with High-energy Electronson the Electrical Parameters of the IGBT-transistors

    V.N. Murashev / M.P. Konovalov / S.A. Legotin / S.I. Didenko / O.I. Rabinovich / A.A. Krasnov / K.A. Кuzmina

    Journal of Nano- and Electronic Physics, Vol 7, Iss 1, Pp 01011-1-01011-

    2015  Volume 3

    Abstract: The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and ... ...

    Abstract The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed.
    Keywords IGBT-transistors ; Irradiation ; Systems ; Radioisotop ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Language English
    Publishing date 2015-03-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    More links

    Kategorien

To top