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Article ; Online: Electric current paths in a Si:P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy.

Basso, Luca / Kehayias, Pauli / Henshaw, Jacob / Saleh Ziabari, Maziar / Byeon, Heejun / Lilly, Michael P / Bussmann, Ezra / Campbell, Deanna M / Misra, Shashank / Mounce, Andrew M

Nanotechnology

2022  Volume 34, Issue 1

Abstract: The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy, a technique known as atomic precision advanced manufacturing (APAM), has allowed us to tailor electronic devices with atomic ... ...

Abstract The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy, a technique known as atomic precision advanced manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we used nitrogen-vacancy (NV) centers in diamond for wide-field magnetic imaging (with a few-mm field of view and micron-scale resolution) of magnetic fields from surface currents flowing in an APAM test device made of a P delta-doped layer on a Si substrate, a standard APAM witness material. We integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current densities, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ∼0.03 A m
Language English
Publishing date 2022-10-20
Publishing country England
Document type Journal Article
ZDB-ID 1362365-5
ISSN 1361-6528 ; 0957-4484
ISSN (online) 1361-6528
ISSN 0957-4484
DOI 10.1088/1361-6528/ac95a0
Database MEDical Literature Analysis and Retrieval System OnLINE

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