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  1. Article ; Online: Effects of -H and -OH Termination on Adhesion of Si-Si Contacts Examined Using Molecular Dynamics and Density Functional Theory.

    Schall, J David / Morrow, Brian H / Carpick, Robert W / Harrison, Judith A

    Langmuir : the ACS journal of surfaces and colloids

    2024  Volume 40, Issue 9, Page(s) 4601–4614

    Abstract: The contact between nanoscale single-crystal silicon asperities and substrates terminated with -H and -OH functional groups is simulated using reactive molecular dynamics (MD). Consistent with previous MD simulations for self-mated surfaces with -H ... ...

    Abstract The contact between nanoscale single-crystal silicon asperities and substrates terminated with -H and -OH functional groups is simulated using reactive molecular dynamics (MD). Consistent with previous MD simulations for self-mated surfaces with -H terminations only, adhesion is found to be low at full adsorbate coverages, be it self-mated coverages of mixtures of -H and -OH groups, or just -OH groups. As the coverage reduces, adhesion increases markedly, by factors of ∼5 and ∼6 for -H-terminated surfaces and -OH-terminated surfaces, respectively, and is due to the formation of covalent Si-Si bonds; for -OH-terminated surfaces, some interfacial Si-O-Si bonds are also formed. Thus, covalent linkages need to be broken upon separation of the tip and substrate. In contrast, replacing -H groups with -OH groups while maintaining complete coverage leads to negligible increases in adhesion. This indicates that increases in adhesion require unsaturated sites. Furthermore, plane-wave density functional theory (DFT) calculations were performed to investigate the energetics of two Si(111) surfaces fully terminated by either -H or -OH groups. Importantly for the adhesion results, both DFT and MD calculations predict the correct trends for the relative bond strengths: Si-O > Si-H > Si-Si. This work supports the contention that prior experimental work observing strong increases in adhesion after sliding Si-Si nanoasperities over each other is due to sliding-induced removal of passivating species on the Si surfaces.
    Language English
    Publishing date 2024-02-07
    Publishing country United States
    Document type Journal Article
    ZDB-ID 2005937-1
    ISSN 1520-5827 ; 0743-7463
    ISSN (online) 1520-5827
    ISSN 0743-7463
    DOI 10.1021/acs.langmuir.3c02870
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Modulation of Structural, Electronic, and Optical Properties of Titanium Nitride Thin Films by Regulated In Situ Oxidation.

    Roy, Manosi / Sarkar, Kaushik / Som, Jacob / Pfeifer, Mark A / Craciun, Valentin / Schall, J David / Aravamudhan, Shyam / Wise, Frank W / Kumar, Dhananjay

    ACS applied materials & interfaces

    2023  Volume 15, Issue 3, Page(s) 4733–4742

    Abstract: Epitaxial titanium nitride (TiN) and titanium oxynitride (TiON) thin films have been grown on sapphire substrates using a pulsed laser deposition (PLD) method in high-vacuum conditions (base pressure <3 × ... ...

    Abstract Epitaxial titanium nitride (TiN) and titanium oxynitride (TiON) thin films have been grown on sapphire substrates using a pulsed laser deposition (PLD) method in high-vacuum conditions (base pressure <3 × 10
    Language English
    Publishing date 2023-01-10
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.2c18926
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Modulation of Structural, Electronic, and Optical Properties of Titanium Nitride Thin Films by Regulated In Situ Oxidation

    Roy, Manosi / Sarkar, Kaushik / Som, Jacob / Pfeifer, Mark A. / Crăciun, V. / Schall, J. David / Aravamudhan, Shyam / Wise, Frank W. / Kumar, Dhananjay

    ACS Applied Materials & Interfaces. 2023 Jan. 10, v. 15, no. 3 p.4733-4742

    2023  

    Abstract: Epitaxial titanium nitride (TiN) and titanium oxynitride (TiON) thin films have been grown on sapphire substrates using a pulsed laser deposition (PLD) method in high-vacuum conditions (base pressure <3 × 10-⁶ T). This vacuum contains enough residual ... ...

    Abstract Epitaxial titanium nitride (TiN) and titanium oxynitride (TiON) thin films have been grown on sapphire substrates using a pulsed laser deposition (PLD) method in high-vacuum conditions (base pressure <3 × 10-⁶ T). This vacuum contains enough residual oxygen to allow a time-independent gas phase oxidation of the ablated species as well as a time-dependent regulated surface oxidation of TiN to TiON films. The time-dependent surface oxidation is controlled by means of film deposition time that, in turn, is controlled by changing the number of laser pulses impinging on the polycrystalline TiN target at a constant repetition rate. By changing the number of laser pulses from 150 to 5000, unoxidized (or negligibly oxidized) and oxidized TiN films have been obtained with the thickness in the range of four unit cells to 70 unit cells of TiN/TiON. X-ray photoelectron spectroscopy (XPS) investigations reveal higher oxygen content in TiON films prepared with a larger number of laser pulses. The oxidation of TiN films is achieved by precisely controlling the time of deposition, which affects the surface diffusion of oxygen to the TiN film lattice. The lattice constants of the TiON films obtained by x-ray diffraction (XRD) increase with the oxygen content in the film, as predicted by molecular dynamics (MD) simulations. The lattice constant increase is explained based on a larger electrostatic repulsive force due to unbalanced local charges in the vicinity of Ti vacancies and substitutional O. The bandgap of TiN and TiON films, measured using UV-visible spectroscopy, has an asymmetric V-shaped variation as a function of the number of pulses. The bandgap variation following the lower number of laser pulses (150-750) of the V-shaped curve is explained using the quantum confinement effect, while the bandgap variation following the higher number of laser pulses (1000-5000) is associated with the modification in the band structure due to hybridization of O₂ₚ and N₂ₚ energy levels.
    Keywords X-ray diffraction ; X-ray photoelectron spectroscopy ; energy ; hybridization ; molecular dynamics ; nitrides ; oxidation ; oxygen ; titanium ; ultraviolet-visible spectroscopy ; thin films ; pulsed laser deposition ; controlled oxidation ; bandgap energy ; oxynitrides ; transition metal nitrides
    Language English
    Dates of publication 2023-0110
    Size p. 4733-4742.
    Publishing place American Chemical Society
    Document type Article ; Online
    ISSN 1944-8252
    DOI 10.1021/acsami.2c18926
    Database NAL-Catalogue (AGRICOLA)

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  4. Article ; Online: Covalent Bonding and Atomic-Level Plasticity Increase Adhesion in Silicon-Diamond Nanocontacts.

    Milne, Zachary B / Schall, J David / Jacobs, Tevis D B / Harrison, Judith A / Carpick, Robert W

    ACS applied materials & interfaces

    2019  Volume 11, Issue 43, Page(s) 40734–40748

    Abstract: Nanoindentation and sliding experiments using single-crystal silicon atomic force microscope probes in contact with diamond substrates in vacuum were carried out in situ with a transmission electron microscope (TEM). After sliding, the experimentally ... ...

    Abstract Nanoindentation and sliding experiments using single-crystal silicon atomic force microscope probes in contact with diamond substrates in vacuum were carried out in situ with a transmission electron microscope (TEM). After sliding, the experimentally measured works of adhesion were significantly larger than values estimated for pure van der Waals (vdW) interactions. Furthermore, the works of adhesion increased with both the normal stress and speed during the sliding, indicating that applied stress played a central role in the reactivity of the interface. Complementary molecular dynamics (MD) simulations were used to lend insight into the atomic-level processes that occur during these experiments. Simulations using crystalline silicon tips with varying degrees of roughness and diamond substrates with different amounts of hydrogen termination demonstrated two relevant phenomena. First, covalent bonds formed across the interface, where the number of bonds formed was affected by the hydrogen termination of the substrate, the tip roughness, the applied stress, and the stochastic nature of bond formation. Second, for initially rough tips, the sliding motion and the associated application of shear stress produced an increase in irreversible atomic-scale plasticity that tended to smoothen the tips' surfaces, which resulted in a concomitant increase in adhesion. In contrast, for initially smooth tips, sliding roughened some of these tips. In the limit of low applied stress, the experimentally determined works of adhesion match the intrinsic (van der Waals) work of adhesion for an atomically smooth silicon-diamond interface obtained from MD simulations. The results provide mechanistic interpretations of sliding-induced changes and interfacial adhesion and may help inform applications involving adhesive interfaces that are subject to applied shear forces and displacements.
    Language English
    Publishing date 2019-10-16
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.9b08695
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article: Covalent Bonding and Atomic-Level Plasticity Increase Adhesion in Silicon–Diamond Nanocontacts

    Milne, Zachary B / Schall, J. David / Jacobs, Tevis D.B / Harrison, Judith A / Carpick, Robert W

    ACS applied materials & interfaces. 2019 Sept. 09, v. 11, no. 43

    2019  

    Abstract: Nanoindentation and sliding experiments using single-crystal silicon atomic force microscope probes in contact with diamond substrates in vacuum were carried out in situ with a transmission electron microscope (TEM). After sliding, the experimentally ... ...

    Abstract Nanoindentation and sliding experiments using single-crystal silicon atomic force microscope probes in contact with diamond substrates in vacuum were carried out in situ with a transmission electron microscope (TEM). After sliding, the experimentally measured works of adhesion were significantly larger than values estimated for pure van der Waals (vdW) interactions. Furthermore, the works of adhesion increased with both the normal stress and speed during the sliding, indicating that applied stress played a central role in the reactivity of the interface. Complementary molecular dynamics (MD) simulations were used to lend insight into the atomic-level processes that occur during these experiments. Simulations using crystalline silicon tips with varying degrees of roughness and diamond substrates with different amounts of hydrogen termination demonstrated two relevant phenomena. First, covalent bonds formed across the interface, where the number of bonds formed was affected by the hydrogen termination of the substrate, the tip roughness, the applied stress, and the stochastic nature of bond formation. Second, for initially rough tips, the sliding motion and the associated application of shear stress produced an increase in irreversible atomic-scale plasticity that tended to smoothen the tips’ surfaces, which resulted in a concomitant increase in adhesion. In contrast, for initially smooth tips, sliding roughened some of these tips. In the limit of low applied stress, the experimentally determined works of adhesion match the intrinsic (van der Waals) work of adhesion for an atomically smooth silicon–diamond interface obtained from MD simulations. The results provide mechanistic interpretations of sliding-induced changes and interfacial adhesion and may help inform applications involving adhesive interfaces that are subject to applied shear forces and displacements.
    Keywords adhesion ; atomic force microscopy ; chemical bonding ; hydrogen ; molecular dynamics ; plasticity ; roughness ; shear stress ; silicon ; van der Waals forces
    Language English
    Dates of publication 2019-0909
    Size p. 40734-40748.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.9b08695
    Database NAL-Catalogue (AGRICOLA)

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  6. Article: The Effects of Interface Structure and Polymerization on the Friction of Model Self-Assembled Monolayers

    Mikulski, Paul T / Van Workum, Kevin / Chateaueuf, Ginger M / Gao, Guangtu / Schall, J. David / Harrison, Judith A

    Tribology letters. 2011 Apr., v. 42, no. 1

    2011  

    Abstract: The friction between two model atomic force microscope tips and two hydrocarbon monolayers has been examined using molecular dynamics simulations. An amorphous hydrocarbon tip and a flat diamond tip were both employed. One monolayer was composed of ... ...

    Abstract The friction between two model atomic force microscope tips and two hydrocarbon monolayers has been examined using molecular dynamics simulations. An amorphous hydrocarbon tip and a flat diamond tip were both employed. One monolayer was composed of linear alkane chains and the other was composed of chains that were polymerized in a regular pattern near the tip-monolayer interface. When friction is decomposed into the forces on individual chains pushing and resisting sliding, the monolayer composed of linear alkane chains exhibited strong pushing forces immediately after clearing tip features at the sliding interface. When this monolayer is paired with the amorphous tip, the strong pushing forces resulted in low friction compared to a monolayer composed of polymerized chains. When the diamond tip is employed, commensurate meshing with the chains of the linear-alkane monolayer resulted in chains resisting tip motion for longer durations. The consequence of this is higher friction compared to the polymerized monolayer, despite the linear-alkane monolayer's more symmetric chain response at resisting-to-pushing transitions.
    Keywords polymerization
    Language English
    Dates of publication 2011-04
    Size p. 37-49.
    Publisher Springer US
    Publishing place Boston
    Document type Article
    ZDB-ID 2015908-0
    ISSN 1573-2711 ; 1023-8883
    ISSN (online) 1573-2711
    ISSN 1023-8883
    DOI 10.1007/s11249-010-9740-z
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  7. Article: Expressions for the stress and elasticity tensors for angle-dependent potentials.

    Van Workum, Kevin / Gao, Guangtu / Schall, J David / Harrison, Judith A

    The Journal of chemical physics

    2006  Volume 125, Issue 14, Page(s) 144506

    Abstract: The stress and elasticity tensors for interatomic potentials that depend explicitly on bond bending and dihedral angles are derived by taking strain derivatives of the free energy. The resulting expressions can be used in Monte Carlo and molecular ... ...

    Abstract The stress and elasticity tensors for interatomic potentials that depend explicitly on bond bending and dihedral angles are derived by taking strain derivatives of the free energy. The resulting expressions can be used in Monte Carlo and molecular dynamics simulations in the canonical and microcanonical ensembles. These expressions are particularly useful at low temperatures where it is difficult to obtain results using the fluctuation formula of Parrinello and Rahman [J. Chem. Phys. 76, 2662 (1982)]. Local elastic constants within heterogeneous and composite materials can also be calculated as a function of temperature using this method. As an example, the stress and elasticity tensors are derived for the second-generation reactive empirical bond-order potential. This potential energy function was used because it has been used extensively in computer simulations of hydrocarbon materials, including carbon nanotubes, and because it is one of the few potential energy functions that can model chemical reactions. To validate the accuracy of the derived expressions, the elastic constants for diamond and graphite and the Young's Modulus of a (10,10) single-wall carbon nanotube are all calculated at T = 0 K using this potential and compared with previously published data and results obtained using other potentials.
    Language English
    Publishing date 2006-10-14
    Publishing country United States
    Document type Journal Article
    ZDB-ID 3113-6
    ISSN 1089-7690 ; 0021-9606
    ISSN (online) 1089-7690
    ISSN 0021-9606
    DOI 10.1063/1.2338522
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  8. Article: Elucidating the Properties of Surrogate Fuel Mixtures Using Molecular Dynamics

    Mooney, Barbara L / Harrison Judith A / Knippenberg M. Todd / Luning Prak Dianne / Morris Robert E / Morrow Brian H / Schall J. David / Trulove Paul C / Van Nostrand Keith

    Energy & Fuels. 2016 Feb. 18, v. 30, no. 2

    2016  

    Abstract: The wide compositional differences between conventional and alternative fuels have resulted in much research aimed at determining which alternative fuels can be used, and in what proportions, in conventional engines. Atomic-scale modeling is uniquely ... ...

    Abstract The wide compositional differences between conventional and alternative fuels have resulted in much research aimed at determining which alternative fuels can be used, and in what proportions, in conventional engines. Atomic-scale modeling is uniquely positioned to lend insight into this question without extensive large-scale tests. The predictive power such modeling affords could narrow the phase space that must be examined experimentally. This study utilizes molecular dynamics (MD) simulations to predict the properties of a set of pure hydrocarbons, as well as binary and multicomponent surrogate fuel mixtures for alternative fuels created from these pure components. The accuracy and transferability of the modified Lennard-Jones adaptive intermolecular reactive empirical bond-order potential (mod-LJ AIREBO) [Liu, A.; Stuart, S. J. J. Comput. Chem. 2008, 29, 601−611] was assessed by calculating densities, heats of vaporization, and bulk moduli of pure hydrocarbons and the mixtures of these hydrocarbons, i.e., surrogate fuels. Calculated results were compared to experimentally determined values and to values obtained with the nonreactive, all-atom version of the optimized potential for liquid simulations (OPLS-AA) [Jorgensen, W. L.; Maxwell, D. S.; TiradoRives, J. J. Am. Chem. Soc. 1996, 118, 11225−11236]. The mod-LJ AIREBO potential quantitatively predicts the densities of the pure hydrocarbons and binary mixtures of n-dodecane and 2,2,4,4,6,8,8-heptamethylnonane (isocetane). It is interesting to note, that despite doing an excellent job predicting the densities of the pure hydrocarbons, the performance of the mod-LJ AIREBO potential degrades when predicting the densities of the multicomponent surrogates and mixtures of n-hexadecane and isocetane, implying that it is not straightforward to extend potentials fit with pure compounds to mixtures. The OPLS-AA potential also has difficulty quantitatively predicting the densities of mixtures, although a new parameter set for long-chain hydrocarbons (L-OPLS) [Siu, S. W. I.; Pluhackova, K.; Bockmann, R. A. J. Chem. Theory Comput. 2012, 8, 1459−1470] yields some improvement for binary mixtures. Heat of vaporization predictions using both potentials also agree reasonably well with experiment. Bulk moduli predictions using the mod-LJ AIREBO potential are consistently higher than, and do not quantitatively agree with, the experimental values. In contrast, bulk moduli predictions using the OPLS-AA potential are generally in good agreement with experimental values. Despite the success of the OPLS-AA potential predicting the bulk moduli of individual hydrocarbons, it is unable to quantitatively predict the bulk moduli of the multicomponent surrogates. Interestingly, the use of the L-OPLS parameter set improves density predictions but not predicted bulk moduli values.
    Keywords alternative fuels ; heat ; hexadecane ; models ; molecular dynamics ; prediction ; volatilization
    Language English
    Dates of publication 2016-0218
    Size p. 784-795.
    Publishing place American Chemical Society
    Document type Article
    ZDB-ID 1483539-3
    ISSN 1520-5029 ; 0887-0624
    ISSN (online) 1520-5029
    ISSN 0887-0624
    DOI 10.1021%2Facs.energyfuels.5b01468
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  9. Article: Friction between solids.

    Harrison, Judith A / Gao, Guangtu / Schall, J David / Knippenberg, M Todd / Mikulski, Paul T

    Philosophical transactions. Series A, Mathematical, physical, and engineering sciences

    2008  Volume 366, Issue 1869, Page(s) 1469–1495

    Abstract: The theoretical examination of the friction between solids is discussed with a focus on self-assembled monolayers, carbon-containing materials and antiwear additives. Important findings are illustrated by describing examples where simulations have ... ...

    Abstract The theoretical examination of the friction between solids is discussed with a focus on self-assembled monolayers, carbon-containing materials and antiwear additives. Important findings are illustrated by describing examples where simulations have complemented experimental work by providing a deeper understanding of the molecular origins of friction. Most of the work discussed herein makes use of classical molecular dynamics (MD) simulations. Of course, classical MD is not the only theoretical tool available to study friction. In view of that, a brief review of the early models of friction is also given. It should be noted that some topics related to the friction between solids, i.e. theory of electronic friction, are not discussed here but will be discussed in a subsequent review.
    Language English
    Publishing date 2008-04-28
    Publishing country England
    Document type Journal Article
    ZDB-ID 208381-4
    ISSN 1471-2962 ; 1364-503X ; 0080-4614 ; 0264-3820 ; 0264-3952
    ISSN (online) 1471-2962
    ISSN 1364-503X ; 0080-4614 ; 0264-3820 ; 0264-3952
    DOI 10.1098/rsta.2007.2169
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  10. Article ; Online: Atomic-scale wear of amorphous hydrogenated carbon during intermittent contact: a combined study using experiment, simulation, and theory.

    Vahdat, Vahid / Ryan, Kathleen E / Keating, Pamela L / Jiang, Yijie / Adiga, Shashishekar P / Schall, J David / Turner, Kevin T / Harrison, Judith A / Carpick, Robert W

    ACS nano

    2014  Volume 8, Issue 7, Page(s) 7027–7040

    Abstract: In this study, we explore the wear behavior of amplitude modulation atomic force microscopy (AM-AFM, an intermittent-contact AFM mode) tips coated with a common type of diamond-like carbon, amorphous hydrogenated carbon (a-C:H), when scanned against an ... ...

    Abstract In this study, we explore the wear behavior of amplitude modulation atomic force microscopy (AM-AFM, an intermittent-contact AFM mode) tips coated with a common type of diamond-like carbon, amorphous hydrogenated carbon (a-C:H), when scanned against an ultra-nanocrystalline diamond (UNCD) sample both experimentally and through molecular dynamics (MD) simulations. Finite element analysis is utilized in a unique way to create a representative geometry of the tip to be simulated in MD. To conduct consistent and quantitative experiments, we apply a protocol that involves determining the tip-sample interaction geometry, calculating the tip-sample force and normal contact stress over the course of the wear test, and precisely quantifying the wear volume using high-resolution transmission electron microscopy imaging. The results reveal gradual wear of a-C:H with no sign of fracture or plastic deformation. The wear rate of a-C:H is consistent with a reaction-rate-based wear theory, which predicts an exponential dependence of the rate of atom removal on the average normal contact stress. From this, kinetic parameters governing the wear process are estimated. MD simulations of an a-C:H tip, whose radius is comparable to the tip radii used in experiments, making contact with a UNCD sample multiple times exhibit an atomic-level removal process. The atomistic wear events observed in the simulations are correlated with under-coordinated atomic species at the contacting surfaces.
    Language English
    Publishing date 2014-07-22
    Publishing country United States
    Document type Journal Article ; Research Support, U.S. Gov't, Non-P.H.S.
    ISSN 1936-086X
    ISSN (online) 1936-086X
    DOI 10.1021/nn501896e
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