Article ; Online: Room-Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes.
Advanced materials (Deerfield Beach, Fla.)
2022 Volume 34, Issue 41, Page(s) e2203888
Abstract: Tunnel field-effect transistors (TFETs) are a promising candidate for low-power applications owing to their steep subthreshold swing of sub-60 mV per decade. For silicon- or germanium-based TFETs, the drive current is low due to the indirect band-to-band ...
| Abstract | Tunnel field-effect transistors (TFETs) are a promising candidate for low-power applications owing to their steep subthreshold swing of sub-60 mV per decade. For silicon- or germanium-based TFETs, the drive current is low due to the indirect band-to-band tunneling (BTBT) process. Direct-bandgap germanium-tin (GeSn) can boost the TFET performance since phonon participation is not required during the tunneling process. Esaki diodes with negative differential resistance (NDR) are used to characterize the BTBT properties and calibrate the tunneling rates for TFET applications. This work demonstrates high-performance GeSn Esaki diodes with clear NDR at room temperature with very high peak-to-valley current ratios of 15-53 from 300 K to 4 K. A record-high peak current density of 545 kA cm |
|---|---|
| Language | English |
| Publishing date | 2022-09-13 |
| Publishing country | Germany |
| Document type | Journal Article |
| ZDB-ID | 1474949-X |
| ISSN | 1521-4095 ; 0935-9648 |
| ISSN (online) | 1521-4095 |
| ISSN | 0935-9648 |
| DOI | 10.1002/adma.202203888 |
| Database | MEDical Literature Analysis and Retrieval System OnLINE |
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