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  1. Article ; Online: Interface State Density Prediction between an Insulator and a Semiconductor by Gaussian Process Regression Models for a Modified Process.

    Matsunaga, Kanta / Harada, Takuto / Harada, Shintaro / Sato, Akinori / Terai, Shota / Uenuma, Mutsunori / Miyao, Tomoyuki / Uraoka, Yukiharu

    ACS omega

    2023  Volume 8, Issue 30, Page(s) 27458–27466

    Abstract: During data-driven process condition optimization on a laboratory scale, only a small-size data set is accessible and should be effectively utilized. On the other hand, during process development, new operations are frequently inserted or current ... ...

    Abstract During data-driven process condition optimization on a laboratory scale, only a small-size data set is accessible and should be effectively utilized. On the other hand, during process development, new operations are frequently inserted or current operations are modified. These accessible data sets are somewhat related but not exactly the same type. In this study, we focus on the prediction of the quality of the interface between an insulator and GaN as a semiconductor for the potential application of GaN power semiconductor devices. The quality of the interface was represented as the interface state density,
    Language English
    Publishing date 2023-07-18
    Publishing country United States
    Document type Journal Article
    ISSN 2470-1343
    ISSN (online) 2470-1343
    DOI 10.1021/acsomega.3c02980
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: High-

    Safaruddin, Aimi Syairah / Bermundo, Juan Paolo S / Wu, Chuanjun / Uenuma, Mutsunori / Yamamoto, Atsuko / Kimura, Mutsumi / Uraoka, Yukiharu

    ACS omega

    2023  Volume 8, Issue 33, Page(s) 29939–29948

    Abstract: Ferroelectric nanoparticles have attracted much attention for numerous electronic applications owing to their nanoscale structure and size-dependent behavior. Barium titanate (BTO) nanoparticles with two different sizes (20 and 100 nm) were synthesized ... ...

    Abstract Ferroelectric nanoparticles have attracted much attention for numerous electronic applications owing to their nanoscale structure and size-dependent behavior. Barium titanate (BTO) nanoparticles with two different sizes (20 and 100 nm) were synthesized and mixed with a polysiloxane (PSX) polymer forming a nanocomposite solution for high-
    Language English
    Publishing date 2023-08-09
    Publishing country United States
    Document type Journal Article
    ISSN 2470-1343
    ISSN (online) 2470-1343
    DOI 10.1021/acsomega.2c08142
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Atomic Imaging of Interface Defects in an Insulating Film on Diamond.

    Fujii, Mami N / Tanaka, Masaki / Tsuno, Takumi / Hashimoto, Yusuke / Tomita, Hiroto / Takeuchi, Soichiro / Koga, Shunjo / Sun, Zexu / Enriquez, John Isaac / Morikawa, Yoshitada / Mizuno, Jun / Uenuma, Mutsunori / Uraoka, Yukiharu / Matsushita, Tomohiro

    Nano letters

    2023  Volume 23, Issue 4, Page(s) 1189–1194

    Abstract: The insulator/semiconductor interface structure is the key to electric device performance, and much interest has been focused on understanding the origin of interfacial defects. However, with conventional techniques, it is difficult to analyze the ... ...

    Abstract The insulator/semiconductor interface structure is the key to electric device performance, and much interest has been focused on understanding the origin of interfacial defects. However, with conventional techniques, it is difficult to analyze the interfacial atomic structure buried in the insulating film. Here, we reveal the atomic structure at the interface between an amorphous aluminum oxide and diamond using a developed electron energy analyzer for photoelectron holography. We find that the three-dimensional atomic structure of a C-O-Al-O-C bridge between two dimer rows of the hydrogen-terminated diamond surface. Our results demonstrate that photoelectron holography can be used to reveal the three-dimensional atomic structure of the interface between a crystal and an amorphous film. We also find that the photoelectron intensity originating from the C-O bonds is strongly related to the interfacial defect density. We anticipate significant progress in the study of amorphous/crystalline interfaces based on their three-dimensional atomic structures analysis.
    Language English
    Publishing date 2023-02-10
    Publishing country United States
    Document type Journal Article
    ISSN 1530-6992
    ISSN (online) 1530-6992
    DOI 10.1021/acs.nanolett.2c04176
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article ; Online: Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing.

    Nath, Shimul Kanti / Das, Sujan Kumar / Nandi, Sanjoy Kumar / Xi, Chen / Marquez, Camilo Verbel / Rúa, Armando / Uenuma, Mutsunori / Wang, Zhongrui / Zhang, Songqing / Zhu, Rui-Jie / Eshraghian, Jason / Sun, Xiao / Lu, Teng / Bian, Yue / Syed, Nitu / Pan, Wenwu / Wang, Han / Lei, Wen / Fu, Lan /
    Faraone, Lorenzo / Liu, Yun / Elliman, Robert G

    Advanced materials (Deerfield Beach, Fla.)

    2024  , Page(s) e2400904

    Abstract: The application of hardware-based neural networks can be enhanced by integrating sensory neurons and synapses that enable direct input from external stimuli. This work reports direct optical control of an oscillatory neuron based on volatile threshold ... ...

    Abstract The application of hardware-based neural networks can be enhanced by integrating sensory neurons and synapses that enable direct input from external stimuli. This work reports direct optical control of an oscillatory neuron based on volatile threshold switching in V
    Language English
    Publishing date 2024-03-22
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.202400904
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article ; Online: Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO

    Felizco, Jenichi / Juntunen, Taneli / Uenuma, Mutsunori / Etula, Jarkko / Tossi, Camilla / Ishikawa, Yasuaki / Tittonen, Ilkka / Uraoka, Yukiharu

    ACS applied materials & interfaces

    2020  Volume 12, Issue 43, Page(s) 49210–49218

    Abstract: Herein, enhancements in thermoelectric (TE) performance, both the power factor (PF) and thermal stability, are exhibited by sandwiching ... ...

    Abstract Herein, enhancements in thermoelectric (TE) performance, both the power factor (PF) and thermal stability, are exhibited by sandwiching HfO
    Language English
    Publishing date 2020-10-16
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.0c11439
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  6. Article ; Online: Electric Field- and Current-Induced Electroforming Modes in NbO

    Nandi, Sanjoy Kumar / Nath, Shimul Kanti / El-Helou, Assaad E / Li, Shuai / Ratcliff, Thomas / Uenuma, Mutsunori / Raad, Peter E / Elliman, Robert G

    ACS applied materials & interfaces

    2020  Volume 12, Issue 7, Page(s) 8422–8428

    Abstract: Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here, we use a simple photoresist-based detection technique to map the spatial distribution of conductive ...

    Abstract Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here, we use a simple photoresist-based detection technique to map the spatial distribution of conductive filaments formed in Nb/NbO
    Language English
    Publishing date 2020-02-07
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.9b20252
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  7. Article: Electric Field- and Current-Induced Electroforming Modes in NbOx

    Nandi, Sanjoy Kumar / Nath, Shimul Kanti / El-Helou, Assaad E / Li, Shuai / Ratcliff, Thomas / Uenuma, Mutsunori / Raad, Peter E / Elliman, Robert G

    ACS applied materials & interfaces. 2020 Jan. 28, v. 12, no. 7

    2020  

    Abstract: Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here, we use a simple photoresist-based detection technique to map the spatial distribution of conductive ...

    Abstract Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here, we use a simple photoresist-based detection technique to map the spatial distribution of conductive filaments formed in Nb/NbOx/Pt devices, and correlate these with current–voltage characteristics and in situ thermoreflectance measurements to identify distinct modes of electroforming in low- and high-conductivity NbOx films. In low-conductivity films, the filaments are randomly distributed within the oxide film, consistent with a field-induced weakest-link mechanism, while in high-conductivity films they are concentrated in the center of the film. In the latter case, the current–voltage characteristics and in situ thermoreflectance imaging show that electroforming is associated with current bifurcation into regions of low and high current density. This is supported by finite element modeling of the current distribution and shown to be consistent with predictions of a simple core–shell model of the current distribution. These results clearly demonstrate two distinct modes of electroforming in the same material system and show that the dominant mode depends on the conductivity of the film, with field-induced electroforming dominant in low-conductivity films and current bifurcation-induced electroforming dominant in high-conductivity films.
    Keywords electric field ; finite element analysis ; image analysis ; models ; prediction
    Language English
    Dates of publication 2020-0128
    Size p. 8422-8428.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.9b20252
    Database NAL-Catalogue (AGRICOLA)

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  8. Article: Creating Reversible p–n Junction on Graphene through Ferritin Adsorption

    Mulyana, Yana / Ishikawa Yasuaki / Okamoto Naofumi / Uenuma Mutsunori / Uraoka Yukiharu / Yamashita Ichiro

    ACS Applied Materials & Interfaces. 2016 Mar. 30, v. 8, no. 12

    2016  

    Abstract: An alternative way to construct a stable p–n junction on graphene-based field effect transistor (G-FET) through physical adsorption of ferritin (spherical protein shell) is presented. The produced p–n junction on G-FET could also operate through ... ...

    Abstract An alternative way to construct a stable p–n junction on graphene-based field effect transistor (G-FET) through physical adsorption of ferritin (spherical protein shell) is presented. The produced p–n junction on G-FET could also operate through water-gate. Native ferritins are known to be negatively charged in wet condition; however, we found that native negatively charged ferritins became positively charged after performing electron beam (EB)-irradiation. We utilized this property to construct p–n junction on G-FET. We found also that EB-irradiation could remove the effect of charged impurity adsorbed on graphene layer, thus the Dirac point was adjusted to gate voltage Vg = 0.
    Keywords adsorption ; ferritin ; graphene
    Language English
    Dates of publication 2016-0330
    Size p. 8192-8200.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021%2Facsami.5b12226
    Database NAL-Catalogue (AGRICOLA)

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  9. Article ; Online: Physical Origin of Negative Differential Resistance in V

    Das, Sujan Kumar / Nandi, Sanjoy Kumar / Marquez, Camilo Verbel / Rúa, Armando / Uenuma, Mutsunori / Puyoo, Etienne / Nath, Shimul Kanti / Albertini, David / Baboux, Nicolas / Lu, Teng / Liu, Yun / Haeger, Tobias / Heiderhoff, Ralf / Riedl, Thomas / Ratcliff, Thomas / Elliman, Robert Glen

    Advanced materials (Deerfield Beach, Fla.)

    2022  Volume 35, Issue 8, Page(s) e2208477

    Abstract: Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the ... ...

    Abstract Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the structural, electrical, and thermal properties of V
    Language English
    Publishing date 2022-12-30
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.202208477
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  10. Article ; Online: Memristive characteristic of an amorphous Ga-Sn-O thin-film device.

    Sugisaki, Sumio / Matsuda, Tokiyoshi / Uenuma, Mutsunori / Nabatame, Toshihide / Nakashima, Yasuhiko / Imai, Takahito / Magari, Yusaku / Koretomo, Daichi / Furuta, Mamoru / Kimura, Mutsumi

    Scientific reports

    2019  Volume 9, Issue 1, Page(s) 2757

    Abstract: We have found a memristive characteristic of an α-GTO thin-film device. The α-GTO thin-film layer is deposited using radio-frequency (RF) magnetron sputtering at room temperature and sandwiched between the Al top and bottom electrodes. It is found that ... ...

    Abstract We have found a memristive characteristic of an α-GTO thin-film device. The α-GTO thin-film layer is deposited using radio-frequency (RF) magnetron sputtering at room temperature and sandwiched between the Al top and bottom electrodes. It is found that the hysteresis loop of the flowing current (I) and applied voltage (V) characteristic becomes larger and stable after the one hundredth cycle. The electrical resistances for the high-resistance state (HRS) and low-resistance state (LRS) are clearly different and relatively stable. Based on various analysis, it is suggested that the memristive characteristic is due to the chemical reaction between the SnO
    Language English
    Publishing date 2019-02-26
    Publishing country England
    Document type Journal Article
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-019-39549-9
    Database MEDical Literature Analysis and Retrieval System OnLINE

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