Article ; Online: Ultrahigh-Quality Ge-on-Glass with a 3.7% Uniaxial Tensile Strain.
ACS omega
2024 Volume 9, Issue 8, Page(s) 9753–9764
Abstract: While there have been notable advancements in the quality of epitaxial Ge on Si, the crystal quality of bulk Ge remains much superior, which provides an effective method to study the performance potentials of Ge-based semiconductor devices. This study ... ...
Abstract | While there have been notable advancements in the quality of epitaxial Ge on Si, the crystal quality of bulk Ge remains much superior, which provides an effective method to study the performance potentials of Ge-based semiconductor devices. This study showcases the development of ultrahigh-quality Ge/poly-Si/SiO |
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Language | English |
Publishing date | 2024-02-14 |
Publishing country | United States |
Document type | Journal Article |
ISSN | 2470-1343 |
ISSN (online) | 2470-1343 |
DOI | 10.1021/acsomega.3c09980 |
Database | MEDical Literature Analysis and Retrieval System OnLINE |
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