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  1. Article ; Online: Ultrahigh-Quality Ge-on-Glass with a 3.7% Uniaxial Tensile Strain.

    Wang, Liming / Xia, Guangrui

    ACS omega

    2024  Volume 9, Issue 8, Page(s) 9753–9764

    Abstract: While there have been notable advancements in the quality of epitaxial Ge on Si, the crystal quality of bulk Ge remains much superior, which provides an effective method to study the performance potentials of Ge-based semiconductor devices. This study ... ...

    Abstract While there have been notable advancements in the quality of epitaxial Ge on Si, the crystal quality of bulk Ge remains much superior, which provides an effective method to study the performance potentials of Ge-based semiconductor devices. This study showcases the development of ultrahigh-quality Ge/poly-Si/SiO
    Language English
    Publishing date 2024-02-14
    Publishing country United States
    Document type Journal Article
    ISSN 2470-1343
    ISSN (online) 2470-1343
    DOI 10.1021/acsomega.3c09980
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries.

    Xia, Guangrui Maggie

    Science bulletin

    2019  Volume 64, Issue 19, Page(s) 1436–1455

    Abstract: Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, ... ...

    Abstract Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, nanometer scale interdiffusion is common, which is generally undesirable for device performance. With higher Ge molar fractions and higher compressive strains, Si-Ge interdiffusion can be much faster than dopant diffusion. However, Si-Ge interdiffusion behaviors have not been well understood until recent years. Much less studies are available for GeSn. This review starts with basic properties and the applications of major group IV semiconductors, and then reviews the progress made so far on Si-Ge and Ge-Sn interdiffusion behaviors. Theories, experimental methods, design and practical considerations are discussed together with the key findings in this field.
    Language English
    Publishing date 2019-07-15
    Publishing country Netherlands
    Document type Journal Article ; Review
    ZDB-ID 2816140-3
    ISSN 2095-9281 ; 2095-9273
    ISSN (online) 2095-9281
    ISSN 2095-9273
    DOI 10.1016/j.scib.2019.07.012
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Sub-10 μm-Thick Ge Thin Film Fabrication from Bulk-Ge Substrates via a Wet Etching Method.

    Wang, Liming / Zhu, Ying / Wen, Rui-Tao / Xia, Guangrui

    ACS omega

    2023  Volume 8, Issue 51, Page(s) 49201–49210

    Abstract: Low-defect density Ge thin films are crucial for studying the impact of defect density on the performance limits of Ge-based optical devices (optical detectors, LEDs, and lasers). Ge thinning is also important for Ge-based multijunction solar cells. In ... ...

    Abstract Low-defect density Ge thin films are crucial for studying the impact of defect density on the performance limits of Ge-based optical devices (optical detectors, LEDs, and lasers). Ge thinning is also important for Ge-based multijunction solar cells. In this work, Ge wet etching using three acidic H
    Language English
    Publishing date 2023-12-12
    Publishing country United States
    Document type Journal Article
    ISSN 2470-1343
    ISSN (online) 2470-1343
    DOI 10.1021/acsomega.3c07490
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Book ; Online: Theoretical study of small signal modulation behavior of Fabry-Perot Germanium-on-Silicon lasers

    Zhu, Ying / Wang, Liming / Li, Zhiqiang / Wen, Ruitao / Xia, Guangrui

    2022  

    Abstract: This work investigated the small signal performance of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3dB bandwidth dependence on the structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and minority ... ...

    Abstract This work investigated the small signal performance of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3dB bandwidth dependence on the structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and minority carrier lifetime were studied. A 3dB bandwidth of 33.94 GHz at a biasing current of 270.5 mA is predicted after Ge laser structure optimization with a defect limited carrier lifetime of 1 ns.
    Keywords Physics - Optics ; Condensed Matter - Materials Science
    Publishing date 2022-07-18
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  5. Article ; Online: 25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate.

    Yang, Yun-Cheng / Wan, Zeyu / Hsu, Guei-Ting / Chiu, Chih-Chuan / Chen, Wei-Hsin / Feifel, Markus / Lackner, David / Xia, Guangrui Maggie / Wu, Chao-Hsin

    Optics letters

    2024  Volume 49, Issue 3, Page(s) 586–589

    Abstract: In this Letter, we present a comprehensive analysis of the high-speed performance of 940 nm oxide-confined AlGaAs vertical-cavity surface-emitting lasers (VCSELs) grown on Ge substrates. Our demonstration reveals a pronounced superiority of Ge-based ... ...

    Abstract In this Letter, we present a comprehensive analysis of the high-speed performance of 940 nm oxide-confined AlGaAs vertical-cavity surface-emitting lasers (VCSELs) grown on Ge substrates. Our demonstration reveals a pronounced superiority of Ge-based VCSELs in terms of thermal stability. The presented Ge-VCSEL has a maximum modulation bandwidth of 16.1 GHz and successfully realizes a 25 Gb/s NRZ transmission at 85
    Language English
    Publishing date 2024-02-01
    Publishing country United States
    Document type Journal Article
    ISSN 1539-4794
    ISSN (online) 1539-4794
    DOI 10.1364/OL.509988
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  6. Article ; Online: Monolithically integrated 940 nm VCSELs on bulk Ge substrates.

    Wan, Zeyu / Yang, Yun-Cheng / Chen, Wei-Hsin / Chiu, Chih-Chuan / Zhao, Yunlong / Feifel, Markus / Chrostowski, Lukas / Lackner, David / Wu, Chao-Hsin / Xia, Guangrui

    Optics express

    2024  Volume 32, Issue 4, Page(s) 6609–6618

    Abstract: This research successfully developed an independent Ge-based VCSEL epitaxy and fabrication technology route, which set the stage for integrating AlGaAs-based semiconductor devices on bulk Ge substrates. This is the second successful Ge-based VCSEL ... ...

    Abstract This research successfully developed an independent Ge-based VCSEL epitaxy and fabrication technology route, which set the stage for integrating AlGaAs-based semiconductor devices on bulk Ge substrates. This is the second successful Ge-based VCSEL technology reported worldwide and the first Ge-based VCSEL technology with key details disclosed, including Ge substrate specification, transition layer structure and composition, and fabrication process. Compared with the GaAs counterparts, after epitaxy optimization, the Ge-based VCSEL wafer has a 40% lower surface root-mean-square roughness and 72% lower average bow-warp. After device fabrication, the Ge-based VCSEL has a 10% lower threshold current density and 19% higher maximum optical differential efficiency than the GaAs-based VCSEL.
    Language English
    Publishing date 2024-03-04
    Publishing country United States
    Document type Journal Article
    ZDB-ID 1491859-6
    ISSN 1094-4087 ; 1094-4087
    ISSN (online) 1094-4087
    ISSN 1094-4087
    DOI 10.1364/OE.513997
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  7. Book ; Online: The stability of exfoliated FeSe nanosheets during in-air device fabrication process

    Yang, Rui / Luo, Weijun / Chi, Shun / Bonn, Douglas / Xia, Guangrui

    2018  

    Abstract: We studied the stability and superconductivity of FeSe nanosheets during an in-air device fabrication process. Methods were developed to improve the exfoliation yield and to maintain the superconductivity of FeSe. Raman spectroscopy, atomic force ... ...

    Abstract We studied the stability and superconductivity of FeSe nanosheets during an in-air device fabrication process. Methods were developed to improve the exfoliation yield and to maintain the superconductivity of FeSe. Raman spectroscopy, atomic force microscopy, optical microscopy and time-of-flight-secondary-ion-mass-spectroscopy measurements show that FeSe nanosheets decayed in air. Precipitation of Se particles and iron oxidation likely occurred during the decay process. Transport measurements revealed that the superconductivity of FeSe disappeared during a conventional electron beam lithography process. Shadow mask evaporation and transfer onto pre-defined electrodes methods were shown to be effective in maintaining the superconductivity after the in-air device fabrication process. These methods developed provide a way of making high quality FeSe nano-devices.
    Keywords Condensed Matter - Materials Science ; Condensed Matter - Mesoscale and Nanoscale Physics
    Publishing date 2018-05-07
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  8. Book ; Online: Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs

    Zhou, Guangnan / Jiang, Yang / Yang, Gaiying / Wang, Qing / Fan, Mengya / Jiang, Lingli / Yu, Hongyu / Xia, Guangrui

    2021  

    Abstract: We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar common- ... ...

    Abstract We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN and Au/Ti/graphene/p-GaN junctions demonstrated that all the three layers (Au, Ti and p-GaN) are essential for the increased resistance. Raman characterization of the p-GaN showed a decrease of the Mg-N bonding, i.e., the deactivation of Mg, which is consistent with the Hall measurement results. Moreover, this high-resistance junction structure was employed in p-GaN gate AlGaN/GaN HEMTs. It was shown to be an effective gate technology that was capable to boost the gate breakdown voltage from 9.9 V to 13.8 V with a negligible effect on the threshold voltage or the sub-threshold slope.
    Keywords Condensed Matter - Materials Science
    Publishing date 2021-02-05
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  9. Article ; Online: Thermal sublimation: a scalable and controllable thinning method for the fabrication of few-layer black phosphorus.

    Luo, Weijun / Yang, Rui / Liu, Jialun / Zhao, Yunlong / Zhu, Wenjuan / Xia, Guangrui Maggie

    Nanotechnology

    2017  Volume 28, Issue 28, Page(s) 285301

    Abstract: We report uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning were confirmed by Raman spectra and Raman mapping. The sublimation rate of BP was around 0 ... ...

    Abstract We report uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning were confirmed by Raman spectra and Raman mapping. The sublimation rate of BP was around 0.18 nm min
    Language English
    Publishing date 2017-07-14
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/aa76ae
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  10. Book ; Online: Design Considerations of Biaxially Tensile-Strained Germanium-on-Silicon Lasers

    Li, Xiyue / Li, Zhiqiang / Li, Simon / Chrostowski, Lukas / Xia, Guangrui

    2015  

    Abstract: Physical models of Ge energy band structure and material loss were implemented in LASTIP(TM), a 2D simulation tool for edge emitting laser diodes. The model calculation is able to match experimental data available. Important design parameters of a Fabry- ... ...

    Abstract Physical models of Ge energy band structure and material loss were implemented in LASTIP(TM), a 2D simulation tool for edge emitting laser diodes. The model calculation is able to match experimental data available. Important design parameters of a Fabry-Perot Ge laser, such as the cavity length, thickness, width, polycrystalline Si cladding layer thickness were studied and optimized. The laser structure optimizations alone were shown to reduce Ith by 22-fold and increase the differential efficiency by 11 times. The simulations also showed that improving the defect limited carrier lifetime is critical for achieving an efficient and low-threshold Ge laser. With the optimized structure design (300 micron for the cavity length, 0.4 micron for the cavity width, 0.3 micron for the cavity thickness, and 0.6 micron for the polycrystalline Si cladding layer thickness) and a defect limited carrier lifetime of 100 ns, a wall-plug efficiency of 14.6% at 1mW output is predicted, where Jth of 2.8 kA/cm2, Ith of 3.3 mA, I_1mA of 9 mA, and differential efficiency of 23.6% can also be achieved. These are tremendous improvements from the available experimental values at 280 kA/cm2, 756 mA, 837 mA and 1.9%, respectively.

    Comment: 12 pages, 9 figures
    Keywords Physics - Optics
    Subject code 621
    Publishing date 2015-11-18
    Publishing country us
    Document type Book ; Online
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