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  1. Article: Performance Assessment of a Junctionless Heterostructure Tunnel FET Biosensor Using Dual Material Gate.

    Xie, Haiwu / Liu, Hongxia

    Micromachines

    2023  Volume 14, Issue 4

    Abstract: Biosensors based on tunnel FET for label-free detection in which a nanogap is introduced under gate electrode to electrically sense the characteristics of biomolecules, have been studied widely in recent years. In this paper, a new type of ... ...

    Abstract Biosensors based on tunnel FET for label-free detection in which a nanogap is introduced under gate electrode to electrically sense the characteristics of biomolecules, have been studied widely in recent years. In this paper, a new type of heterostructure junctionless tunnel FET biosensor with an embedded nanogap is proposed, in which the control gate consists of two parts, namely the tunnel gate and auxiliary gate, with different work functions; and the detection sensitivity of different biomolecules can be controlled and adjusted by the two gates. Further, a polar gate is introduced above the source region, and a P+ source is formed by the charge plasma concept by selecting appropriate work functions for the polar gate. The variation of sensitivity with different control gate and polar gate work functions is explored. Neutral and charged biomolecules are considered to simulate device-level gate effects, and the influence of different dielectric constants on sensitivity is also researched. The simulation results show that the switch ratio of the proposed biosensor can reach 10
    Language English
    Publishing date 2023-03-31
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2620864-7
    ISSN 2072-666X
    ISSN 2072-666X
    DOI 10.3390/mi14040805
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article: Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source.

    Xie, Haiwu / Liu, Hongxia

    Micromachines

    2023  Volume 14, Issue 7

    Abstract: In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. In the irradiation phenomenon, heavy ion produces a series of electron-hole ... ...

    Abstract In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. In the irradiation phenomenon, heavy ion produces a series of electron-hole pairs along the incident track, and then the generated transient current can overturn the logical state of the device when the number of electron-hole pairs is large enough. In the single-particle effect of DMG-GDS-HJLTFET, the carried energy is usually represented by linear energy transfer value (LET). In simulation, the effects of incident ion energy, incident angle, incident completion time, incident position and drain bias voltage on the single-particle effect of DMG-GDS-HJLTFET are investigated. On this basis, we optimize the auxiliary gate dielectric, tunneling gate length for reliability. Simulation results show HfO
    Language English
    Publishing date 2023-07-13
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2620864-7
    ISSN 2072-666X
    ISSN 2072-666X
    DOI 10.3390/mi14071413
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article: Study of a Gate-Engineered Vertical TFET with GaSb/GaAs

    Xie, Haiwu / Chen, Yanning / Liu, Hongxia / Guo, Dan

    Materials (Basel, Switzerland)

    2021  Volume 14, Issue 6

    Abstract: It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the source region can improve the subthreshold performance of the ... ...

    Abstract It is well known that the vertical tunnel field effect transistor (TFET) is easier to fabricate than the conventional lateral TFETs in technology. Meanwhile, a lightly doped pocket under the source region can improve the subthreshold performance of the vertical TFETs. This paper demonstrates a dual material gate heterogeneous dielectric vertical TFET (DMG-HD-VTFET) with a lightly doped source-pocket. The proposed structure adopts a GaSb/GaAs
    Language English
    Publishing date 2021-03-15
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2487261-1
    ISSN 1996-1944
    ISSN 1996-1944
    DOI 10.3390/ma14061426
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article: Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors.

    Chong, Chen / Liu, Hongxia / Wang, Shulong / Chen, Shupeng / Xie, Haiwu

    Micromachines

    2021  Volume 12, Issue 6

    Abstract: Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect ... ...

    Abstract Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect transistors (TGTFET) adapt double source and T-shaped gates to enhance the on-state current and to generate the tunneling probability. In this paper, TGTFET subjected to heavy-ion irradiation is studied by technology computer-aided design (TCAD) simulation for the first time. The results show that as the drain bias and linear energy transfer (LET) increase, the transient current and collected charge also increase. When LET = 100 MeV·cm
    Language English
    Publishing date 2021-05-24
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2620864-7
    ISSN 2072-666X
    ISSN 2072-666X
    DOI 10.3390/mi12060609
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article: Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor.

    Chong, Chen / Liu, Hongxia / Wang, Shulong / Chen, Shupeng / Xie, Haiwu

    Micromachines

    2020  Volume 12, Issue 1

    Abstract: Label-free biomolecular sensors have been widely studied due to their simple operation. L-shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low subthreshold swing, off-state current, and power consumption. In a ... ...

    Abstract Label-free biomolecular sensors have been widely studied due to their simple operation. L-shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low subthreshold swing, off-state current, and power consumption. In a dielectric-modulated LTFET (DM-LTFET), a cavity is trenched under the gate electrode in the vertical direction and filled with biomolecules to realize the function of the sensor. A 2D simulator was utilized to study the sensitivity of a DM-LTFET sensor. The simulation results show that the current sensitivity of the proposed structure could be as high as 2321, the threshold voltage sensitivity could reach 0.4, and the subthreshold swing sensitivity could reach 0.7. This shows that the DM-LTFET sensor is suitable for a high-sensitivity, low-power-consumption sensor field.
    Language English
    Publishing date 2020-12-27
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2620864-7
    ISSN 2072-666X
    ISSN 2072-666X
    DOI 10.3390/mi12010019
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  6. Article: A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance.

    Chen, Shupeng / Wang, Shulong / Liu, Hongxia / Han, Tao / Xie, Haiwu / Chong, Chen

    Nanoscale research letters

    2020  Volume 15, Issue 1, Page(s) 202

    Abstract: In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET ... ...

    Abstract In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching ratio of 12 orders of magnitude and no obvious ambipolar effect can be obtained. High κ material stack gate dielectric is induced to improve the off-state leakage, interface characteristics and the reliability of DF-TFET. Moreover, by using the dopingless channel and fin structure, the difficulties of doping process and asymmetric gate overlap formation can be resolved. As a result, the structure of DF-TFET can possess good manufacture applicability and remarkably reduce footprint. The physical mechanism of device and the effect of parameters on performance are studied in this work. Finally, on-state current (I
    Language English
    Publishing date 2020-10-17
    Publishing country United States
    Document type Journal Article
    ZDB-ID 2253244-4
    ISSN 1556-276X ; 1931-7573
    ISSN (online) 1556-276X
    ISSN 1931-7573
    DOI 10.1186/s11671-020-03429-3
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  7. Article: Probing the Field-Effect Transistor with Monolayer MoS

    Han, Tao / Liu, Hongxia / Wang, Shulong / Chen, Shupeng / Xie, Haiwu / Yang, Kun

    Nanomaterials (Basel, Switzerland)

    2019  Volume 9, Issue 9

    Abstract: The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide ( ... ...

    Abstract The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS
    Language English
    Publishing date 2019-08-27
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano9091209
    Database MEDical Literature Analysis and Retrieval System OnLINE

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