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  1. Artikel ; Online: Role of Oxygen in Amorphous Carbon Hard Mask Plasma Etching.

    Yeom, Hee-Jung / Yoon, Min Young / Choi, Daehan / Lee, Youngseok / Kim, Jung-Hyung / You, Shin-Jae / Lee, Hyo-Chang

    ACS omega

    2023  Band 8, Heft 36, Seite(n) 32450–32457

    Abstract: In the current and next-generation Si-based semiconductor manufacturing processes, amorphous carbon layer (ACL) hard masks are garnering considerable attention for high-aspect-ratio (HAR) etching due to their outstanding physical properties. However, a ... ...

    Abstract In the current and next-generation Si-based semiconductor manufacturing processes, amorphous carbon layer (ACL) hard masks are garnering considerable attention for high-aspect-ratio (HAR) etching due to their outstanding physical properties. However, a current limitation is the lack of research on the etching characteristics of ACL hard masks under plasma etching conditions. Given the significant impact of hard mask etching on device quality and performance, a deeper understanding of the etching characteristics of ACL is necessary. This study aims to investigate the role of oxygen in the etching characteristics of an ACL hard mask in a complex gas mixture plasma etching process. Our results show that a small change of oxygen concentration (3.5-6.5%) can significantly alter the etch rate and profile of the ACL hard mask. Through our comprehensive plasma diagnostics and wafer-processing results, we have also proven a detailed mechanism for the role of the oxygen gas. This research provides a solution for achieving an outstanding etch profile in ACL hard masks with sub-micron scale and emphasizes the importance of controlling the oxygen concentration to optimize the plasma conditions for the desired etching characteristics.
    Sprache Englisch
    Erscheinungsdatum 2023-08-31
    Erscheinungsland United States
    Dokumenttyp Journal Article
    ISSN 2470-1343
    ISSN (online) 2470-1343
    DOI 10.1021/acsomega.3c02438
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  2. Artikel ; Online: Microstructural characterization and inductively coupled plasma-reactive ion etching resistance of Y

    Ma, Ho Jin / Kim, Seonghyeon / Kim, Ha-Neul / Kim, Mi-Ju / Ko, Jae-Woong / Lee, Jae-Wook / Kim, Jung-Hyung / Lee, Hyo-Chang / Park, Young-Jo

    Scientific reports

    2024  Band 14, Heft 1, Seite(n) 7008

    Abstract: In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber's interior can be influenced by plasma attack. When ... ...

    Abstract In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber's interior can be influenced by plasma attack. When ceramic components are exposed to long-term plasma environments, the eroded components must be replaced. Furthermore, non-volatile reactants can form and settle on semiconductor chips, acting as contaminants and reducing semiconductor production yield. Therefore, for semiconductor processing equipment parts to be utilized, it is necessary that they exhibit minimized generation of contaminant particles and not deviate significantly from the composition of conventionally used Al
    Sprache Englisch
    Erscheinungsdatum 2024-03-25
    Erscheinungsland England
    Dokumenttyp Journal Article
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-024-57697-5
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  3. Artikel ; Online: Crystalline silicon nanoparticle formation by tailored plasma irradiation: self-structurization, nucleation and growth acceleration, and size control.

    Choi, Daehan / Kim, Jung Hyung / Kwon, Deuk Chul / Shin, Chae Ho / Ryu, Hyun / Yoon, Euijoon / Lee, Hyo-Chang

    Nanoscale

    2021  Band 13, Heft 23, Seite(n) 10356–10364

    Abstract: Crystalline silicon nanoparticles at the nanometer scale have been attracting great interest in many different optoelectronic applications such as photovoltaic and light-emitting-diode devices. Formation, crystallization, and size control of silicon ... ...

    Abstract Crystalline silicon nanoparticles at the nanometer scale have been attracting great interest in many different optoelectronic applications such as photovoltaic and light-emitting-diode devices. Formation, crystallization, and size control of silicon nanoparticles in nonharsh and nontoxic environments are highly required to achieve outstanding optoelectronic characteristics. The existing methods require high temperature, use of HF solution, and an additional process for the uniform redistribution of nanoparticles on the substrate and there are difficulties in controlling the size. Herein, we report a new self-assembly method that applies the controlled extremely low plasma ion energy near the sputtering threshold energy in rare gas environments as nonharsh and nontoxic environments. This method produces silicon nanoparticles by crystallization nucleation directly at the surface of the amorphous film via plasma surface interactions. It is evidently observed that the nucleation and growth rates of the crystalline silicon nanoparticles are promoted by the enhanced plasma ion energy. The crystalline silicon nanoparticle size is tailored to the nanometer scale by the plasma ion energy control.
    Sprache Englisch
    Erscheinungsdatum 2021-06-09
    Erscheinungsland England
    Dokumenttyp Journal Article
    ZDB-ID 2515664-0
    ISSN 2040-3372 ; 2040-3364
    ISSN (online) 2040-3372
    ISSN 2040-3364
    DOI 10.1039/d1nr00628b
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  4. Artikel ; Online: Cutoff probe using Fourier analysis for electron density measurement.

    Na, Byung-Keun / You, Kwang-Ho / Kim, Dae-Woong / Chang, Hong-Young / You, Shin-Jae / Kim, Jung-Hyung

    The Review of scientific instruments

    2012  Band 83, Heft 1, Seite(n) 13510

    Abstract: This paper proposes a new method for cutoff probe using a nanosecond impulse generator and an oscilloscope, instead of a network analyzer. The nanosecond impulse generator supplies a radiating signal of broadband frequency spectrum simultaneously without ...

    Abstract This paper proposes a new method for cutoff probe using a nanosecond impulse generator and an oscilloscope, instead of a network analyzer. The nanosecond impulse generator supplies a radiating signal of broadband frequency spectrum simultaneously without frequency sweeping, while frequency sweeping method is used by a network analyzer in a previous method. The transmission spectrum (S21) was obtained through a Fourier analysis of the transmitted impulse signal detected by the oscilloscope and was used to measure the electron density. The results showed that the transmission frequency spectrum and the electron density obtained with a new method are very close to those obtained with a previous method using a network analyzer. And also, only 15 ns long signal was necessary for spectrum reconstruction. These results were also compared to the Langmuir probe's measurements with satisfactory results. This method is expected to provide not only fast measurement of absolute electron density, but also function in other diagnostic situations where a network analyzer would be used (a hairpin probe and an impedance probe) by replacing the network analyzer with a nanosecond impulse generator and an oscilloscope.
    Sprache Englisch
    Erscheinungsdatum 2012-01
    Erscheinungsland United States
    Dokumenttyp Journal Article
    ZDB-ID 209865-9
    ISSN 1089-7623 ; 0034-6748
    ISSN (online) 1089-7623
    ISSN 0034-6748
    DOI 10.1063/1.3680103
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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