Artikel ; Online: MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement.
2010 Band 18, Heft 10, Seite(n) 10674–10684
Abstract: Multi-quantum wells (MQWs) InGaN/GaN LEDs, 300 microm x 300 microm chip size, were fabricated with Ta(2)O(5) / SiO(2) dielectric multi-layer micro-mirror array (MMA) embedded in the epitaxiallateral- overgrowth (ELOG) gallium nitride (GaN) on the c-plane ...
| Abstract | Multi-quantum wells (MQWs) InGaN/GaN LEDs, 300 microm x 300 microm chip size, were fabricated with Ta(2)O(5) / SiO(2) dielectric multi-layer micro-mirror array (MMA) embedded in the epitaxiallateral- overgrowth (ELOG) gallium nitride (GaN) on the c-plane sapphire substrate. MQWs InGaN/GaN LEDs with ELOG embedded patterned SiO(2) array (P-SiO(2)) of the same dimension as the MMA were also fabricated for comparison. Dislocation density was reduced for the ELOG samples. 75.2% light extraction enhancement for P-SiO(2)-LED and 102.6% light extraction enhancement for MMA-LED were obtained over the standard LED. We showed that multiple-diffraction with high intensity from the MMA redirected the trap lights to escape from the LED causing the light extraction enhancement. |
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| Mesh-Begriff(e) | Crystallization/methods ; Gallium/chemistry ; Lenses ; Light ; Lighting/instrumentation ; Miniaturization ; Scattering, Radiation ; Semiconductors |
| Chemische Substanzen | gallium nitride (1R9CC3P9VL) ; Gallium (CH46OC8YV4) |
| Sprache | Englisch |
| Erscheinungsdatum | 2010-05-10 |
| Erscheinungsland | United States |
| Dokumenttyp | Journal Article |
| ZDB-ID | 1491859-6 |
| ISSN | 1094-4087 ; 1094-4087 |
| ISSN (online) | 1094-4087 |
| ISSN | 1094-4087 |
| DOI | 10.1364/OE.18.010674 |
| Datenquelle | MEDical Literature Analysis and Retrieval System OnLINE |
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