LIVIVO - Das Suchportal für Lebenswissenschaften

switch to English language
Erweiterte Suche

Suchergebnis

Treffer 1 - 2 von insgesamt 2

Suchoptionen

  1. Artikel ; Online: Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity

    V.N. Murashev / S.Yu. Yurchuk / S.A. Legotin / V.P. Yaromskiy / Yu.V. Osipov / V.P. Astahov / D.S. El’nikov / S.I. Didenko / O.I. Rabinovich / K.A. Kuz’mina

    Journal of Nano- and Electronic Physics, Vol 7, Iss 2, Pp 02023-1-02023-

    2015  Band 5

    Abstract: In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction ... ...

    Abstract In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the photosensitive structures characteristics in order to optimize them were investigated.
    Schlagwörter Silicon p-i-n-photodiode characteristics simulation ; Spectral sensitivity ; Optimization design of photodetector ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Sprache Englisch
    Erscheinungsdatum 2015-06-01T00:00:00Z
    Verlag Sumy State University
    Dokumenttyp Artikel ; Online
    Datenquelle BASE - Bielefeld Academic Search Engine (Lebenswissenschaftliche Auswahl)

    Volltext online

    Zusatzmaterialien

    Kategorien

    Fernleihe an ZB MED

    Sie können sich den gewünschten Titel als lokale Nutzerin oder lokaler Nutzer von ZB MED direkt an den Standort Köln schicken lassen.

  2. Artikel ; Online: The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance

    S.A. Legotin / V.N. Murashev / S.Yu. Yurchuk / V.P. Yaromskiy / V.P. Astahov / K.A. Kuz’mina / O.I. Rabinovich / D.S. El’nikov / U.V. Osipov / A.A. Krasnov / S.I. Didenko

    Journal of Nano- and Electronic Physics, Vol 7, Iss 4, Pp 04017-1-04017-

    2015  Band 2

    Abstract: In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" ... ...

    Abstract In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed. For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon PIN-diode 5 kOhm substrate with the experimental data.
    Schlagwörter Silicon p-i-n structure ; Design optimizatio ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Sprache Englisch
    Erscheinungsdatum 2015-12-01T00:00:00Z
    Verlag Sumy State University
    Dokumenttyp Artikel ; Online
    Datenquelle BASE - Bielefeld Academic Search Engine (Lebenswissenschaftliche Auswahl)

    Volltext online

    Zusatzmaterialien

    Kategorien

    Fernleihe an ZB MED

    Sie können sich den gewünschten Titel als lokale Nutzerin oder lokaler Nutzer von ZB MED direkt an den Standort Köln schicken lassen.

Zum Seitenanfang